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Electrical characterization of Ge-pFETs with HfO2/TiN metal gate: review of possible defects impacting the hole mobility
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Electrical characterization of Ge-pFETs with HfO2/TiN metal gate: review of possible defects impacting the hole mobility
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Date
2010
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Mitard, Jerome
;
Vincent, Benjamin
;
De Jaeger, Brice
;
Krom, Raymond
;
Loo, Roger
;
Eneman, Geert
;
De Meyer, Kristin
;
Meuris, Marc
;
Heyns, Marc
;
Vandervorst, Wilfried
;
Caymax, Matty
;
Hoffmann, Thomas Y.
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1864
since deposited on 2021-10-18
Acq. date: 2025-12-10
Citations
Metrics
Views
1864
since deposited on 2021-10-18
Acq. date: 2025-12-10
Citations