Publication:

Double patterning at NA 0.33 versus high-NA single exposure in EUV lithography: an imaging comparison

Date

2018
Proceedings Paper
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dc.contributor.authorGao, Weimin
dc.contributor.authorWiaux, Vincent
dc.contributor.authorHoppe, Wolfgang
dc.contributor.authorPhilipsen, Vicky
dc.contributor.authorMelvin, Lawrence
dc.contributor.authorHendrickx, Eric
dc.contributor.authorLucas, Kevin
dc.contributor.authorKim, Ryan Ryoung han
dc.contributor.imecauthorGao, Weimin
dc.contributor.imecauthorWiaux, Vincent
dc.contributor.imecauthorPhilipsen, Vicky
dc.contributor.imecauthorHendrickx, Eric
dc.contributor.imecauthorKim, Ryan Ryoung han
dc.contributor.orcidimecPhilipsen, Vicky::0000-0002-2959-432X
dc.date.accessioned2021-10-25T18:51:27Z
dc.date.available2021-10-25T18:51:27Z
dc.date.embargo9999-12-31
dc.date.issued2018
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/30741
dc.identifier.urlhttps://doi.org/10.1117/12.2297677
dc.source.beginpage105830O
dc.source.conferenceExtreme Ultraviolet (EUV) Lithography IX
dc.source.conferencedate26/02/2018
dc.source.conferencelocationSan Jose, CA USA
dc.title

Double patterning at NA 0.33 versus high-NA single exposure in EUV lithography: an imaging comparison

dc.typeProceedings paper
dspace.entity.typePublication
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