Publication:
Ab-intio based electron-phonon scattering for 2D materials within the NEGF framework
| dc.contributor.author | Gaddemane, Gautam | |
| dc.contributor.author | Duflou, Rutger | |
| dc.contributor.author | Sankaran, Kiroubanand | |
| dc.contributor.author | Pourtois, Geoffrey | |
| dc.contributor.author | Houssa, Michel | |
| dc.contributor.author | Afzalian, Aryan | |
| dc.contributor.imecauthor | Gaddemane, Gautam | |
| dc.contributor.imecauthor | Duflou, Rutger | |
| dc.contributor.imecauthor | Sankaran, Kiroubanand | |
| dc.contributor.imecauthor | Pourtois, Geoffrey | |
| dc.contributor.imecauthor | Houssa, Michel | |
| dc.contributor.imecauthor | Afzalian, Aryan | |
| dc.contributor.orcidimec | Houssa, Michel::0000-0003-1844-3515 | |
| dc.contributor.orcidimec | Duflou, Rutger::0000-0002-0357-1293 | |
| dc.contributor.orcidimec | Sankaran, Kiroubanand::0000-0001-6988-7269 | |
| dc.contributor.orcidimec | Pourtois, Geoffrey::0000-0003-2597-8534 | |
| dc.contributor.orcidimec | Afzalian, Aryan::0000-0002-5260-0281 | |
| dc.date.accessioned | 2022-05-02T09:21:11Z | |
| dc.date.available | 2022-05-02T09:21:11Z | |
| dc.date.issued | 2021 | |
| dc.identifier.doi | 10.1109/SISPAD54002.2021.9592532 | |
| dc.identifier.eisbn | 978-1-6654-0685-7 | |
| dc.identifier.issn | 1946-1569 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/39725 | |
| dc.publisher | IEEE | |
| dc.source.beginpage | 167 | |
| dc.source.conference | International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) | |
| dc.source.conferencedate | SEP 27-29, 2021 | |
| dc.source.conferencelocation | Dallas | |
| dc.source.endpage | 170 | |
| dc.source.journal | na | |
| dc.source.numberofpages | 4 | |
| dc.title | Ab-intio based electron-phonon scattering for 2D materials within the NEGF framework | |
| dc.type | Proceedings paper | |
| dspace.entity.type | Publication | |
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