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Influence of the substrate voltage on the random telegraph signal parameters in submicron n-channel metal-oxide-semiconductor field-effect transistors under a constant inversion charge density

Date

2000
Journal article
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dc.contributor.authorLukyanchikova, N. B.
dc.contributor.authorPetrichuk, M. V.
dc.contributor.authorGarbar, N. P.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-14T13:17:53Z
dc.date.available2021-10-14T13:17:53Z
dc.date.embargo9999-12-31
dc.date.issued2000
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/4544
dc.source.beginpage345
dc.source.endpage353
dc.source.issue3
dc.source.journalApplied Physics A
dc.source.volumeA70
dc.title

Influence of the substrate voltage on the random telegraph signal parameters in submicron n-channel metal-oxide-semiconductor field-effect transistors under a constant inversion charge density

dc.typeJournal article
dspace.entity.typePublication
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