Analytical model for point and line tunneling in a tunnel field-effect transistor

dc.contributor.author	Vandenberghe, William
dc.contributor.author	Verhulst, Anne
dc.contributor.author	Groeseneken, Guido
dc.contributor.author	Soree, Bart
dc.contributor.author	Magnus, Wim
dc.contributor.imecauthor	Verhulst, Anne
dc.contributor.imecauthor	Groeseneken, Guido
dc.contributor.imecauthor	Soree, Bart
dc.contributor.imecauthor	Magnus, Wim
dc.contributor.orcidimec	Verhulst, Anne::0000-0002-3742-9017
dc.contributor.orcidimec	Soree, Bart::0000-0002-4157-1956
dc.date.accessioned	2021-10-17T12:08:46Z
dc.date.available	2021-10-17T12:08:46Z
dc.date.issued	2008
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/14694
dc.source.beginpage	137
dc.source.conference	International Conference on Simulation of Semiconductor Processes and Devices - SISPAD
dc.source.conferencedate	9/09/2008
dc.source.conferencelocation	Hakone Japan
dc.source.endpage	140
dc.title	Analytical model for point and line tunneling in a tunnel field-effect transistor
dc.type	Proceedings paper
dspace.entity.type	Publication
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