Publication:

Interpretation of temperature-dependent transport properties of GaN/sapphire films grown by MBE and LP-MOCVD

Date

1999
Meeting abstract
Simple item page Full metadata Statistics
 
dc.contributor.authorHarris, J. J.
dc.contributor.authorLee, K. J.
dc.contributor.authorHarrison, I.
dc.contributor.authorFlannery, L. B.
dc.contributor.authorKorakakis, D.
dc.contributor.authorCheng, T.
dc.contributor.authorFoxon, C. T.
dc.contributor.authorBougrioua, Zahia
dc.contributor.authorMoerman, Ingrid
dc.contributor.authorVan der Stricht, Wim
dc.contributor.authorThrush, E. J.
dc.contributor.authorHamilton, B.
dc.contributor.authorFerhah, K.
dc.contributor.imecauthorMoerman, Ingrid
dc.contributor.orcidimecMoerman, Ingrid::0000-0003-2377-3674
dc.date.accessioned2021-10-06T11:17:25Z
dc.date.available2021-10-06T11:17:25Z
dc.date.embargo9999-12-31
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3492
dc.source.beginpage126
dc.source.conference3rd International Conference on Nitride Semiconductors - ICNS3
dc.source.conferencedate04/07/1999
dc.source.conferencelocationMontpellier France
dc.title

Interpretation of temperature-dependent transport properties of GaN/sapphire films grown by MBE and LP-MOCVD

dc.typeMeeting abstract
dspace.entity.typePublication
Files

Original bundle

Name:
3453.pdf
Size:
212.16 KB
Format:
Adobe Portable Document Format
Download
Publication available in collections:
Conference contributions