Publication:

Ab initio perspective of ultra-scaled CMOS from 2D-material fundamentals to dynamically doped transistors

 
dc.contributor.authorAfzalian, Aryan
dc.contributor.imecauthorAfzalian, Aryan
dc.contributor.orcidimecAfzalian, Aryan::0000-0002-5260-0281
dc.date.accessioned2022-03-08T13:12:33Z
dc.date.available2022-03-08T13:12:33Z
dc.date.issued2021
dc.identifier.doi10.1038/s41699-020-00181-1
dc.identifier.issn2397-7132
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/39351
dc.publisherNATURE RESEARCH
dc.source.beginpage5
dc.source.issue1
dc.source.journalNPJ 2D MATERIALS AND APPLICATIONS
dc.source.numberofpages13
dc.source.volume5
dc.subject.keywordsMOS2
dc.subject.keywordsSEMICONDUCTORS
dc.title

Ab initio perspective of ultra-scaled CMOS from 2D-material fundamentals to dynamically doped transistors

dc.typeJournal article
dspace.entity.typePublication
Files

Original bundle

Name:
s41699-020-00181-1.pdf
Size:
2.35 MB
Format:
Adobe Portable Document Format
Description:
Published version
Publication available in collections: