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Explanation of the "long distance" Vt roll-off in deep submicron nMOS transistors with Indium channel

Date

1998
Proceedings Paper
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dc.contributor.authorKubicek, Stefan
dc.contributor.authorLyu, Jeong-ho
dc.contributor.authorDe Meyer, Kristin
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorDe Meyer, Kristin
dc.date.accessioned2021-09-30T12:24:55Z
dc.date.available2021-09-30T12:24:55Z
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2684
dc.source.beginpage368
dc.source.conferenceProceedings of the 28th European Solid-State Device Research Conference - ESSDERC'98; 8-10 Sept. 1998; Bordeaux, France.
dc.source.conferencelocation
dc.source.endpage371
dc.title

Explanation of the "long distance" Vt roll-off in deep submicron nMOS transistors with Indium channel

dc.typeProceedings paper
dspace.entity.typePublication
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