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Bulk micro defects of p/p epitaxial silicon wafers with nitrogen doped substrates and their gettering behavior

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dc.contributor.authorSchmolke, R.
dc.contributor.authorBlietz, M.
dc.contributor.authorHölzl, R.
dc.contributor.authorMenzel, D.
dc.contributor.authorBender, Hugo
dc.contributor.imecauthorBender, Hugo
dc.date.accessioned2021-10-14T23:04:27Z
dc.date.available2021-10-14T23:04:27Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6800
dc.source.beginpage658
dc.source.conferenceSemiconductor Silicon 2002. Proceedings of the 9th International Symposium on Silicon Materials Science and Technology
dc.source.conferencedate12/05/2002
dc.source.conferencelocationPhiladelphia, PA USA
dc.source.endpage669
dc.title

Bulk micro defects of p/p epitaxial silicon wafers with nitrogen doped substrates and their gettering behavior

dc.typeProceedings paper
dspace.entity.typePublication
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