Publication:
Analysis and modeling of reverse-biased gate leakage current in AlGaN/GaN high electron mobility transistors
Loading...
Journal
Abstract
Description
Metrics
Views
851 since deposited on 2024-01-13
Acq. date: 2025-10-27
Citations
Metrics
Views
851 since deposited on 2024-01-13
Acq. date: 2025-10-27
Citations