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Gas-phase surface proessing prior to 3.2nm gate oxidation

Date

1998
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dc.contributor.authorRuzyllo, Jerzy
dc.contributor.authorRöhr, Erika
dc.contributor.authorBaeyens, Martien
dc.contributor.authorBearda, Twan
dc.contributor.authorMertens, Paul
dc.contributor.authorHeyns, Marc
dc.contributor.imecauthorMertens, Paul
dc.contributor.imecauthorHeyns, Marc
dc.date.accessioned2021-10-01T08:50:32Z
dc.date.available2021-10-01T08:50:32Z
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2920
dc.source.conference4th International Symposium on Ultra Clean Processing of Silicon Surfaces - UCPSS
dc.source.conferencedate21/09/1998
dc.source.conferencelocationOostende Belgium
dc.title

Gas-phase surface proessing prior to 3.2nm gate oxidation

dc.typeOral presentation
dspace.entity.typePublication
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