Publication:
Behaviour of Poly-Si1-XGex-gated MOS capacitors under different electrical stress conditions in the direct tunnelling regime
Date
| dc.contributor.author | Yousif, M. Y. A. | |
| dc.contributor.author | Willander, M. | |
| dc.contributor.author | Lundgren, P. | |
| dc.contributor.author | Caymax, Matty | |
| dc.contributor.imecauthor | Caymax, Matty | |
| dc.date.accessioned | 2021-10-14T18:30:26Z | |
| dc.date.available | 2021-10-14T18:30:26Z | |
| dc.date.issued | 2001 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/5866 | |
| dc.source.beginpage | 478 | |
| dc.source.endpage | 482 | |
| dc.source.issue | 6 | |
| dc.source.journal | Semiconductor Science and Technology | |
| dc.source.volume | 16 | |
| dc.title | Behaviour of Poly-Si1-XGex-gated MOS capacitors under different electrical stress conditions in the direct tunnelling regime | |
| dc.type | Journal article | |
| dspace.entity.type | Publication | |
| Files | ||
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