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1/f noise analysis of replacement metal gate bulk p-type fin field effect transistor
Publication:
1/f noise analysis of replacement metal gate bulk p-type fin field effect transistor
Date
2013-03
Journal article
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Lee, Jae Woo
;
Cho, Moon Ju
;
Simoen, Eddy
;
Ritzenthaler, Romain
;
Togo, Mitsuhiro
;
Boccardi, Guillaume
;
Mitard, Jerome
;
Ragnarsson, Lars-Ake
;
Chiarella, Thomas
;
Veloso, Anabela
;
Horiguchi, Naoto
;
Thean, Aaron
;
Groeseneken, Guido
Journal
Applied Physics Letters
Abstract
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2156
since deposited on 2021-10-21
Acq. date: 2025-10-23
Citations
Metrics
Views
2156
since deposited on 2021-10-21
Acq. date: 2025-10-23
Citations