Publication:

Characterization of Enhancement-Mode Asymmetrical GaN Transistor Half Bridge in High Frequency Operation

Date

2021
Proceedings Paper
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dc.contributor.authorLin, Wei-Ren
dc.contributor.authorChatterjee, Urmimala
dc.contributor.authorMartinez, Wilmar
dc.contributor.imecauthorChatterjee, Urmimala
dc.contributor.orcidimecChatterjee, Urmimala::0000-0002-8934-6774
dc.date.accessioned2022-09-22T15:17:47Z
dc.date.available2022-09-04T02:39:18Z
dc.date.available2022-09-22T15:17:47Z
dc.date.embargo9999-12-31
dc.date.issued2021
dc.identifier.eisbn978-9-0758-1537-5
dc.identifier.issn2325-0313
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/40336
dc.publisherIEEE
dc.source.conference23rd European Conference on Power Electronics and Applications (EPE ECCE Europe)
dc.source.conferencedateSEP 06-10, 2021
dc.source.conferencelocationGent
dc.source.journalna
dc.source.numberofpages7
dc.subject.keywordsDYNAMIC R-ON
dc.subject.keywordsHEMTS
dc.subject.keywordsSUPPRESSION
dc.title

Characterization of Enhancement-Mode Asymmetrical GaN Transistor Half Bridge in High Frequency Operation

dc.typeProceedings paper
dspace.entity.typePublication
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