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Recent findings in electrical behavior of CMOS high-K dielectric/metal gate stacks

Date

2011
Proceedings Paper
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dc.contributor.authorGhibaudo, Gerard
dc.contributor.authorCoignus, Jean
dc.contributor.authorCharbonnier, Matthieu
dc.contributor.authorMitard, Jerome
dc.contributor.authorLeroux, Charles
dc.contributor.authorGarros, Xavier
dc.contributor.authorClerc, Raphael
dc.contributor.authorReimbold, Gilles
dc.contributor.imecauthorMitard, Jerome
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.date.accessioned2021-10-19T13:43:04Z
dc.date.available2021-10-19T13:43:04Z
dc.date.embargo9999-12-31
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18951
dc.source.beginpage773
dc.source.conferenceSilicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11
dc.source.conferencedate1/05/2011
dc.source.conferencelocationMontreal Canada
dc.source.endpage804
dc.title

Recent findings in electrical behavior of CMOS high-K dielectric/metal gate stacks

dc.typeProceedings paper
dspace.entity.typePublication
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