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Effect of metal work functions on barrier heights of Schottky contacts and two-dimensional electron gas in strained AlGaN/GaN heterostructures

Date

2004
Proceedings Paper
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dc.contributor.authorWang, Wenfei
dc.contributor.authorZimmermann, L.
dc.contributor.authorDerluyn, Joff
dc.contributor.authorGermain, Marianne
dc.contributor.authorSchreurs, Dominique
dc.contributor.authorBorghs, Gustaaf
dc.contributor.imecauthorWang, Wenfei
dc.contributor.imecauthorSchreurs, Dominique
dc.contributor.imecauthorBorghs, Gustaaf
dc.date.accessioned2021-10-15T17:50:12Z
dc.date.available2021-10-15T17:50:12Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9903
dc.source.beginpage41
dc.source.conferenceWOCSDICE - The 28th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe
dc.source.conferencedate17/05/2004
dc.source.conferencelocationSmolenice Castle Slovakia
dc.source.endpage42
dc.title

Effect of metal work functions on barrier heights of Schottky contacts and two-dimensional electron gas in strained AlGaN/GaN heterostructures

dc.typeProceedings paper
dspace.entity.typePublication
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