Publication:
Band alignment at the interface of (100)Si with HfxTa1-xOy high-k dielectric layers
Date
| dc.contributor.author | Afanasiev, Valeri | |
| dc.contributor.author | Stesmans, Andre | |
| dc.contributor.author | Zhao, Chao | |
| dc.contributor.author | Caymax, Matty | |
| dc.contributor.author | Rittersma, Z.M. | |
| dc.contributor.author | Maes, Jan | |
| dc.contributor.imecauthor | Afanasiev, Valeri | |
| dc.contributor.imecauthor | Stesmans, Andre | |
| dc.contributor.imecauthor | Caymax, Matty | |
| dc.contributor.imecauthor | Maes, Jan | |
| dc.date.accessioned | 2021-10-16T00:42:29Z | |
| dc.date.available | 2021-10-16T00:42:29Z | |
| dc.date.issued | 2005 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/10004 | |
| dc.source.beginpage | 072108-1 | |
| dc.source.endpage | 072108-3 | |
| dc.source.issue | 7 | |
| dc.source.journal | Applied Physics Letters | |
| dc.source.volume | 86 | |
| dc.title | Band alignment at the interface of (100)Si with HfxTa1-xOy high-k dielectric layers | |
| dc.type | Journal article | |
| dspace.entity.type | Publication | |
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