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Observation of 4,4 dB brillouin gain in a silicon wire

Date

2014
Proceedings Paper
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dc.contributor.authorVan Laer, Raphael
dc.contributor.authorKuyken, Bart
dc.contributor.authorVan Thourhout, Dries
dc.contributor.authorBaets, Roel
dc.contributor.imecauthorVan Laer, Raphael
dc.contributor.imecauthorKuyken, Bart
dc.contributor.imecauthorVan Thourhout, Dries
dc.contributor.imecauthorBaets, Roel
dc.contributor.orcidimecVan Thourhout, Dries::0000-0003-0111-431X
dc.contributor.orcidimecBaets, Roel::0000-0003-1266-1319
dc.date.accessioned2021-10-22T07:16:49Z
dc.date.available2021-10-22T07:16:49Z
dc.date.embargo9999-12-31
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24703
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=6995498&contentType=Conference+Publications
dc.source.beginpage558
dc.source.conferenceIEEE Photonics Conference
dc.source.conferencedate12/10/2014
dc.source.conferencelocationSan Diego, CA USA
dc.source.endpage559
dc.title

Observation of 4,4 dB brillouin gain in a silicon wire

dc.typeProceedings paper
dspace.entity.typePublication
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