Reconstruction dependent reactivity of As-decapped In0.53Ga0.47As(001) surfaces and its influence on the electrical quality of the interface with Al2O3 grown by atomic layer deposition

dc.contributor.author	Molle, Alessandro
dc.contributor.author	Lamagna, Luca
dc.contributor.author	Grazianetti, C.
dc.contributor.author	Brammertz, Guy
dc.contributor.author	Merckling, Clement
dc.contributor.author	Caymax, Matty
dc.contributor.author	Spiga, Sabina
dc.contributor.author	Fanciulli, Marco
dc.contributor.imecauthor	Brammertz, Guy
dc.contributor.imecauthor	Merckling, Clement
dc.contributor.imecauthor	Caymax, Matty
dc.contributor.orcidimec	Brammertz, Guy::0000-0003-1404-7339
dc.contributor.orcidimec	Merckling, Clement::0000-0003-3084-2543
dc.date.accessioned	2021-10-19T16:28:50Z
dc.date.available	2021-10-19T16:28:50Z
dc.date.issued	2011
dc.identifier.issn	0003-6951
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/19448
dc.source.beginpage	193505
dc.source.issue	19
dc.source.journal	Applied Physics Letters
dc.source.volume	99
dc.title	Reconstruction dependent reactivity of As-decapped In0.53Ga0.47As(001) surfaces and its influence on the electrical quality of the interface with Al2O3 grown by atomic layer deposition
dc.type	Journal article
dspace.entity.type	Publication
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