Publication:

Experimental study of programming saturation in low-coupling planar high-k/metal gate Nand flash memory cells using a dedicated test structure

Date

2014
Proceedings Paper
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dc.contributor.authorBlomme, Pieter
dc.contributor.authorTan, Chi Lim
dc.contributor.authorSouriau, Laurent
dc.contributor.authorVersluijs, Janko
dc.contributor.authorVan den Bosch, Geert
dc.contributor.authorVan Houdt, Jan
dc.contributor.imecauthorBlomme, Pieter
dc.contributor.imecauthorSouriau, Laurent
dc.contributor.imecauthorVersluijs, Janko
dc.contributor.imecauthorVan den Bosch, Geert
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.orcidimecSouriau, Laurent::0000-0002-5138-5938
dc.contributor.orcidimecVan den Bosch, Geert::0000-0001-9971-6954
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.date.accessioned2021-10-22T00:47:25Z
dc.date.available2021-10-22T00:47:25Z
dc.date.embargo9999-12-31
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23559
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=6849365&contentType=Conference+Publications
dc.source.beginpage1
dc.source.conferenceIEEE 6th International Memory Workshop - IMW
dc.source.conferencedate18/05/2014
dc.source.conferencelocationTaipei Taiwan
dc.source.endpage4
dc.title

Experimental study of programming saturation in low-coupling planar high-k/metal gate Nand flash memory cells using a dedicated test structure

dc.typeProceedings paper
dspace.entity.typePublication
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