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Substrate current characteristics in partially depleted silicon-on-insulator n-MOSFETs from room temperature down to 4.2 K

Date

1995
Journal article
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dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-09-29T13:16:42Z
dc.date.available2021-09-29T13:16:42Z
dc.date.embargo9999-12-31
dc.date.issued1995
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/878
dc.source.beginpage321
dc.source.endpage326
dc.source.issue5
dc.source.journalCryogenics
dc.source.volume35
dc.title

Substrate current characteristics in partially depleted silicon-on-insulator n-MOSFETs from room temperature down to 4.2 K

dc.typeJournal article
dspace.entity.typePublication
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