Publication:

Self-aligned PtSi fully silicided (FUSI) metal gates for 45 nm CMOS applications

Date

2005-05
Proceedings Paper
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dc.contributor.authorVan Dal, Mark
dc.contributor.authorLauwers, Anne
dc.contributor.authorCunniffe, John
dc.contributor.authorVerbeeck, Rita
dc.contributor.authorVrancken, Christa
dc.contributor.authorDemeurisse, Caroline
dc.contributor.authorDao, T.
dc.contributor.authorTamminga, Y.
dc.contributor.authorVeloso, Anabela
dc.contributor.authorKittl, Jorge
dc.contributor.authorMaex, Karen
dc.contributor.imecauthorVan Dal, Mark
dc.contributor.imecauthorLauwers, Anne
dc.contributor.imecauthorVerbeeck, Rita
dc.contributor.imecauthorVrancken, Christa
dc.contributor.imecauthorDemeurisse, Caroline
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorMaex, Karen
dc.date.accessioned2021-10-16T05:59:01Z
dc.date.available2021-10-16T05:59:01Z
dc.date.issued2005-05
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11365
dc.source.beginpage233
dc.source.conferenceAdvanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS: New Materials, Processes, and Equipment
dc.source.conferencedate16/05/2005
dc.source.conferencelocationQuebec Canada
dc.source.endpage240
dc.title

Self-aligned PtSi fully silicided (FUSI) metal gates for 45 nm CMOS applications

dc.typeProceedings paper
dspace.entity.typePublication
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