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Enhancement of "linear kink effect" in fully depleted SOI n-MOSFETs at liquid nitrogen temperature

Date

2004
Proceedings Paper
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dc.contributor.authorHayama, K.
dc.contributor.authorTakakura, K.
dc.contributor.authorOhyama, H.
dc.contributor.authorRafi, J.M.
dc.contributor.authorMercha, Abdelkarim
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.imecauthorMercha, Abdelkarim
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecMercha, Abdelkarim::0000-0002-2174-6958
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-15T13:44:20Z
dc.date.available2021-10-15T13:44:20Z
dc.date.embargo9999-12-31
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9006
dc.source.beginpage121
dc.source.conferenceProceedings WOLTE-6 - 6th European Workshop on Low Temperature Electronics
dc.source.conferencedate23/06/2004
dc.source.conferencelocationNoordwijk The Netherlands
dc.source.endpage126
dc.title

Enhancement of "linear kink effect" in fully depleted SOI n-MOSFETs at liquid nitrogen temperature

dc.typeProceedings paper
dspace.entity.typePublication
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