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Impact of isolation scheme on thermal resistance and collecotr-substrate capacitance of SiGe HBTs

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dc.contributor.authorYou, Shuzhen
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorVan Huylenbroeck, Stefaan
dc.contributor.authorSibaja-Hernandez, Arturo
dc.contributor.authorVenegas, Rafael
dc.contributor.authorDe Meyer, Kristin
dc.contributor.imecauthorYou, Shuzhen
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.imecauthorVan Huylenbroeck, Stefaan
dc.contributor.imecauthorSibaja-Hernandez, Arturo
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.contributor.orcidimecVan Huylenbroeck, Stefaan::0000-0001-9978-3575
dc.date.accessioned2021-10-19T22:06:54Z
dc.date.available2021-10-19T22:06:54Z
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20183
dc.source.beginpage243
dc.source.conference41st European Solid-State Device Research Conference - ESSDERC
dc.source.conferencedate12/09/2011
dc.source.conferencelocationHelsinki Finland
dc.source.endpage246
dc.title

Impact of isolation scheme on thermal resistance and collecotr-substrate capacitance of SiGe HBTs

dc.typeProceedings paper
dspace.entity.typePublication
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