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Thin SiGe strain-relaxed buffer layers: relaxation mechanism and integration in strained Si MOS-FETs
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Thin SiGe strain-relaxed buffer layers: relaxation mechanism and integration in strained Si MOS-FETs
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Date
2005
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Caymax, Matty
;
Delhougne, Romain
;
Loo, Roger
;
Eneman, Geert
;
Verheyen, Peter
;
Ries, Michael
;
Luysberg, Martina
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1951
since deposited on 2021-10-16
Acq. date: 2025-12-11
Citations
Metrics
Views
1951
since deposited on 2021-10-16
Acq. date: 2025-12-11
Citations