Publication:

Ge and InP selective epitaxial growth on Si substrates for advanced CMOS devices

Date

 
dc.contributor.authorWang, Gang
dc.contributor.thesisadvisorHeyns, Marc
dc.contributor.thesisadvisorSeefeld, M.
dc.date.accessioned2021-10-19T21:37:31Z
dc.date.available2021-10-19T21:37:31Z
dc.date.embargo9999-12-31
dc.date.issued2011-03
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20127
dc.title

Ge and InP selective epitaxial growth on Si substrates for advanced CMOS devices

dc.typePHD thesis
dspace.entity.typePublication
Files

Original bundle

Name:
24401.pdf
Size:
7.58 MB
Format:
Adobe Portable Document Format
Publication available in collections: