Publication:

Surface-Potential-Based Compact Modeling of p-GaN Gate HEMTs

Date

2021
Journal article
https://doi.org/10.3390/mi12020199
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dc.contributor.authorWang, Jie
dc.contributor.authorChen, Zhanfei
dc.contributor.authorYou, Shuzhen
dc.contributor.authorBakeroot, Benoit
dc.contributor.authorLiu, Jun
dc.contributor.authorDecoutere, Stefaan
dc.contributor.imecauthorYou, Shuzhen
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidextWang, Jie::0000-0002-4635-8230
dc.contributor.orcidextChen, Zhanfei::0000-0002-0711-8760
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2022-02-21T13:49:17Z
dc.date.available2022-02-21T13:49:17Z
dc.date.issued2021
dc.identifier.doi10.3390/mi12020199
dc.identifier.issn2072-666X
dc.identifier.pmidMEDLINE:33671856
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/38950
dc.publisherMDPI
dc.source.beginpage199
dc.source.issue2
dc.source.journalMICROMACHINES
dc.source.numberofpages9
dc.source.volume12
dc.title

Surface-Potential-Based Compact Modeling of p-GaN Gate HEMTs

dc.typeJournal article
dspace.entity.typePublication
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