Publication:

Comprehensive study of the fabrication of SGOI substrates By the Ge condensation technique: oxidation kinetics and relaxation mechanism

Date

2009
Proceedings Paper
Simple item page Full metadata Statistics
 
dc.contributor.authorSouriau, Laurent
dc.contributor.authorWang, Gang
dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.contributor.authorMeuris, Marc
dc.contributor.authorHeyns, Marc
dc.contributor.authorVandervorst, Wilfried
dc.contributor.imecauthorSouriau, Laurent
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecSouriau, Laurent::0000-0002-5138-5938
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.accessioned2021-10-18T03:19:10Z
dc.date.available2021-10-18T03:19:10Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16261
dc.identifier.urlhttp://www.electrochem.org/
dc.source.beginpage363
dc.source.conferenceULSI Process Technology 6
dc.source.conferencedate4/10/2009
dc.source.conferencelocationVienna Austria
dc.source.endpage375
dc.title

Comprehensive study of the fabrication of SGOI substrates By the Ge condensation technique: oxidation kinetics and relaxation mechanism

dc.typeProceedings paper
dspace.entity.typePublication
Files
Publication available in collections:
Conference contributions