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Growth and optimization of InGaN/InGaN multiple quantum wells by metal organic vapour phase epitaxy

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dc.contributor.authorLiang, Hu
dc.contributor.authorCheng, Kai
dc.contributor.authorZhang, Liyang
dc.contributor.authorLeys, Maarten
dc.contributor.authorSijmus, Bram
dc.contributor.authorL'abbe, Caroline
dc.contributor.authorDekoster, Johan
dc.contributor.authorBorghs, Gustaaf
dc.contributor.imecauthorLiang, Hu
dc.contributor.imecauthorDekoster, Johan
dc.contributor.imecauthorBorghs, Gustaaf
dc.date.accessioned2021-10-19T15:29:49Z
dc.date.available2021-10-19T15:29:49Z
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19295
dc.source.conferenceMRS Fall Meeting Symposium O: Compound Semiconductors for Generating, Emitting, and Manipulating Energy
dc.source.conferencedate28/11/2011
dc.source.conferencelocationBoston, MA USA
dc.title

Growth and optimization of InGaN/InGaN multiple quantum wells by metal organic vapour phase epitaxy

dc.typeOral presentation
dspace.entity.typePublication
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