Publication:

High-current InP-based triple heterojunction tunnel transistors

Date

2016
Proceedings Paper
Simple item page Full metadata Statistics
 
dc.contributor.authorLong, Pengyu
dc.contributor.authorHuang, Jun
dc.contributor.authorPovolotskyi, Michael
dc.contributor.authorVerreck, Devin
dc.contributor.authorKlimeck, Gerhard
dc.contributor.authorRodwell, Mark
dc.contributor.imecauthorVerreck, Devin
dc.contributor.orcidimecVerreck, Devin::0000-0002-3833-5880
dc.date.accessioned2021-10-23T12:19:02Z
dc.date.available2021-10-23T12:19:02Z
dc.date.embargo9999-12-31
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26925
dc.identifier.urlhttp://ieeexplore.ieee.org/abstract/document/7528592/?section=abstract
dc.source.beginpage1
dc.source.conference28th International Conference on Indium Phosphide and Related Materials - IPRM
dc.source.conferencedate26/06/2016
dc.source.conferencelocationToyama Japan
dc.source.endpage2
dc.title

High-current InP-based triple heterojunction tunnel transistors

dc.typeProceedings paper
dspace.entity.typePublication
Files

Original bundle

Name:
34193.pdf
Size:
390.87 KB
Format:
Adobe Portable Document Format
Download
Publication available in collections:
Conference contributions