Publication:

Significant enhancement of breakdown voltage for GaN DHFETs by Si substrate removal

Date

2011
Journal article
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dc.contributor.authorSrivastava, Puneet
dc.contributor.authorDas, Jo
dc.contributor.authorVisalli, Domenica
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorMalinowski, Pawel
dc.contributor.authorMarcon, Denis
dc.contributor.authorCheng, Kai
dc.contributor.authorGeens, Karen
dc.contributor.authorLeys, Maarten
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorMertens, Robert
dc.contributor.authorBorghs, Gustaaf
dc.contributor.imecauthorMalinowski, Pawel
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorGeens, Karen
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.imecauthorMertens, Robert
dc.contributor.imecauthorBorghs, Gustaaf
dc.contributor.orcidimecMalinowski, Pawel::0000-0002-2934-470X
dc.contributor.orcidimecGeens, Karen::0000-0003-1815-3972
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2021-10-19T19:09:33Z
dc.date.available2021-10-19T19:09:33Z
dc.date.issued2011
dc.identifier.issn1610-1634
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19823
dc.source.beginpage2216
dc.source.endpage2218
dc.source.issue7_8
dc.source.journalPhysica Status Solidi C
dc.source.volume8
dc.title

Significant enhancement of breakdown voltage for GaN DHFETs by Si substrate removal

dc.typeJournal article
dspace.entity.typePublication
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