Publication:

Quantitative two-dimensional carrier mapping in silicon nanowire-based tunnel-field effect transistors with sub-3nm resolution

Date

2010
Proceedings Paper
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dc.contributor.authorSchulze, Andreas
dc.contributor.authorHantschel, Thomas
dc.contributor.authorEyben, Pierre
dc.contributor.authorVandooren, Anne
dc.contributor.authorRooyackers, Rita
dc.contributor.authorMody, Jay
dc.contributor.authorVerhulst, Anne
dc.contributor.authorVandervorst, Wilfried
dc.contributor.imecauthorHantschel, Thomas
dc.contributor.imecauthorEyben, Pierre
dc.contributor.imecauthorVandooren, Anne
dc.contributor.imecauthorVerhulst, Anne
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecHantschel, Thomas::0000-0001-9476-4084
dc.contributor.orcidimecVandooren, Anne::0000-0002-2412-0176
dc.contributor.orcidimecVerhulst, Anne::0000-0002-3742-9017
dc.date.accessioned2021-10-18T21:23:57Z
dc.date.available2021-10-18T21:23:57Z
dc.date.embargo9999-12-31
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17963
dc.source.beginpage1258-P06-02
dc.source.conferenceLow-Dimensional Functional Nanostructures--Fabrication, Characterization and Applications
dc.source.conferencedate5/04/2010
dc.source.conferencelocationSan Francisco, CA USA
dc.title

Quantitative two-dimensional carrier mapping in silicon nanowire-based tunnel-field effect transistors with sub-3nm resolution

dc.typeProceedings paper
dspace.entity.typePublication
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