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In-situ studies of point defect reactions in silicon by high flux electron iIrradiation in a high voltage transmission electron microscope

Date

1994
Proceedings Paper
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dc.contributor.authorFedina, L.
dc.contributor.authorVan Landuyt, J.
dc.contributor.authorVanhellemont, Jan
dc.contributor.authorRomano, Albert
dc.contributor.authorAseev, A.
dc.date.accessioned2021-09-29T12:41:15Z
dc.date.available2021-09-29T12:41:15Z
dc.date.embargo9999-12-31
dc.date.issued1994
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/154
dc.source.beginpage83
dc.source.conferenceJoint Meeting of the Belgian and Dutch Societies for Electron Microscopy
dc.source.conferencedate1/12/1994
dc.source.conferencelocationArnhem The Netherlands
dc.source.endpage85
dc.title

In-situ studies of point defect reactions in silicon by high flux electron iIrradiation in a high voltage transmission electron microscope

dc.typeProceedings paper
dspace.entity.typePublication
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