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Demonstration of scaled 0.099μm² FinFET 6T-SRAM cell using full-field EUV lithography for (Sub-)22nm node single-patterning technology

Date

2009-12
Proceedings Paper
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dc.contributor.authorVeloso, Anabela
dc.contributor.authorDemuynck, Steven
dc.contributor.authorErcken, Monique
dc.contributor.authorGoethals, Mieke
dc.contributor.authorLocorotondo, Sabrina
dc.contributor.authorLazzarino, Frederic
dc.contributor.authorAltamirano Sanchez, Efrain
dc.contributor.authorHuffman, Craig
dc.contributor.authorDe Keersgieter, An
dc.contributor.authorBrus, Stephan
dc.contributor.authorDemand, Marc
dc.contributor.authorStruyf, Herbert
dc.contributor.authorDe Backer, Johan
dc.contributor.authorHermans, Jan
dc.contributor.authorDelvaux, Christie
dc.contributor.authorBaudemprez, Bart
dc.contributor.authorVandeweyer, Tom
dc.contributor.authorVan Roey, Frieda
dc.contributor.authorBaerts, Christina
dc.contributor.authorGoossens, Danny
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorDemuynck, Steven
dc.contributor.imecauthorErcken, Monique
dc.contributor.imecauthorLocorotondo, Sabrina
dc.contributor.imecauthorLazzarino, Frederic
dc.contributor.imecauthorAltamirano Sanchez, Efrain
dc.contributor.imecauthorDe Keersgieter, An
dc.contributor.imecauthorBrus, Stephan
dc.contributor.imecauthorDemand, Marc
dc.contributor.imecauthorStruyf, Herbert
dc.contributor.imecauthorDe Backer, Johan
dc.contributor.imecauthorHermans, Jan
dc.contributor.imecauthorDelvaux, Christie
dc.contributor.imecauthorBaudemprez, Bart
dc.contributor.imecauthorVandeweyer, Tom
dc.contributor.imecauthorVan Roey, Frieda
dc.contributor.imecauthorBaerts, Christina
dc.contributor.imecauthorGoossens, Danny
dc.contributor.imecauthorDekkers, Harold
dc.contributor.imecauthorOng, Patrick
dc.contributor.orcidimecLazzarino, Frederic::0000-0001-7961-9727
dc.contributor.orcidimecDe Keersgieter, An::0000-0002-5527-8582
dc.contributor.orcidimecHermans, Jan::0000-0003-1249-8902
dc.contributor.orcidimecDekkers, Harold::0000-0003-4778-5709
dc.contributor.orcidimecOng, Patrick::0000-0002-2072-292X
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.contributor.orcidimecRonse, Kurt::0000-0003-0803-4267
dc.contributor.orcidimecAltamirano Sanchez, Efrain::0000-0003-3235-6055
dc.contributor.orcidimecBrus, Stephan::0000-0003-3554-0640
dc.contributor.orcidimecStruyf, Herbert::0000-0002-6782-5424
dc.date.accessioned2021-10-18T04:38:25Z
dc.date.available2021-10-18T04:38:25Z
dc.date.embargo9999-12-31
dc.date.issued2009-12
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16454
dc.source.beginpage301
dc.source.conferenceIEEE International Electron Devices Meeting - IEDM
dc.source.conferencedate7/12/2009
dc.source.conferencelocationBaltimore, MD USA
dc.source.endpage304
dc.title

Demonstration of scaled 0.099μm² FinFET 6T-SRAM cell using full-field EUV lithography for (Sub-)22nm node single-patterning technology

dc.typeProceedings paper
dspace.entity.typePublication
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