Correlation between particles and induced voids at the bonding interface

Abstract

Contamination particles induce voids at the bonding interfaces in wafer-to-wafer (W2W) and die-to-wafer (D2W) hybrid bonding (HB). Such bonding voids can be detrimental to the electrical properties of the devices being fabricated.In this study we have deposited W-particles with e-beam assisted deposition on the surface of SiCN-coated wafers, proceeded to bonding the wafers with a blanket counterpart and inspected the resulting bonding voids with a Scanning Acoustic Microscope.We could obtain a correlation between the sizes of the deposited particles and the respective induced voids – an amplification factor of 50x. Such correlation allows determining the sensitivity of bonding voids to the dimensions of particles at the bonding interface.