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The need to incorporate the real micro-contact distribution in spreading resistance correction schemes

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dc.contributor.authorClarysse, Trudo
dc.contributor.authorVandervorst, Wilfried
dc.contributor.imecauthorVandervorst, Wilfried
dc.date.accessioned2021-10-06T10:48:24Z
dc.date.available2021-10-06T10:48:24Z
dc.date.embargo9999-12-31
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3300
dc.source.beginpage105
dc.source.conference5th International Workshop on the Measurement, Characterization, and Modeling of Ultra-Shallow Doping Profiles in Semiconductors
dc.source.conferencedate28/03/1999
dc.source.conferencelocationResearch Triangle Park, NC USA
dc.source.endpage116
dc.title

The need to incorporate the real micro-contact distribution in spreading resistance correction schemes

dc.typeProceedings paper
dspace.entity.typePublication
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