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Increase in oxide trap density due to the implementation of high-k and Al2O3 cap layers in thick-oxide input-output transistors for DRAM applications

Date

2015
Proceedings Paper
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dc.contributor.authorSimoen, Eddy
dc.contributor.authorRitzenthaler, Romain
dc.contributor.authorCho, Moon Ju
dc.contributor.authorSchram, Tom
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorAoulaiche, Marc
dc.contributor.authorSpessot, Alessio
dc.contributor.authorFazan, Pierre
dc.contributor.authorClaeys, Cor
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorRitzenthaler, Romain
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorSpessot, Alessio
dc.contributor.imecauthorFazan, Pierre
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecRitzenthaler, Romain::0000-0002-8615-3272
dc.contributor.orcidimecSchram, Tom::0000-0003-1533-7055
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.accessioned2021-10-22T22:55:16Z
dc.date.available2021-10-22T22:55:16Z
dc.date.issued2015
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25912
dc.identifier.urlhttp://ecst.ecsdl.org/content/69/10/281.abstract
dc.source.beginpage281
dc.source.conferenceULSI Process Integration IX
dc.source.conferencedate11/10/2015
dc.source.conferencelocationPhoenix, AZ USA
dc.source.endpage289
dc.title

Increase in oxide trap density due to the implementation of high-k and Al2O3 cap layers in thick-oxide input-output transistors for DRAM applications

dc.typeProceedings paper
dspace.entity.typePublication
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