Publication:

Optimization of Reactive Ion Etching of Al0.48In0.52As in CH4/H2 and its Application to Dry Gate Recess of HEMT's

Date

Loading...
Thumbnail Image

Abstract

Description

Metrics

Views

33312 since deposited on 2021-09-29
Acq. date: 2026-01-02

Citations

Metrics

Views

33312 since deposited on 2021-09-29
Acq. date: 2026-01-02

Citations