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Carrier diffusivity in highly excited bulk SiC, GaN, and diamond crystals by optical probes

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dc.contributor.authorJarasiunas, K.
dc.contributor.authorScajev, P.
dc.contributor.authorMalinauskas, T.
dc.contributor.authorKato, M.
dc.contributor.authorIvakin, E.
dc.contributor.authorNesladek, Milos
dc.contributor.authorHaenen, Ken
dc.contributor.authorOzgur, U.
dc.contributor.authorMorkoc, H.
dc.contributor.imecauthorNesladek, Milos
dc.contributor.imecauthorHaenen, Ken
dc.contributor.orcidimecHaenen, Ken::0000-0001-6711-7367
dc.date.accessioned2021-10-20T11:53:26Z
dc.date.available2021-10-20T11:53:26Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20866
dc.source.beginpage309
dc.source.conferenceSilicon Carbide and Related Materials 2011
dc.source.conferencedate11/09/2011
dc.source.conferencelocationCleveland, OH USA
dc.source.endpage312
dc.title

Carrier diffusivity in highly excited bulk SiC, GaN, and diamond crystals by optical probes

dc.typeProceedings paper
dspace.entity.typePublication
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