Publication:

ESD ballasting of Ge Finfet ggNMOS devices

Date

2017
Proceedings Paper
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dc.contributor.authorBoschke, Roman
dc.contributor.authorChen, Shih-Hung
dc.contributor.authorScholz, Mirko
dc.contributor.authorHellings, Geert
dc.contributor.authorLinten, Dimitri
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorCollaert, Nadine
dc.contributor.authorGroeseneken, Guido
dc.contributor.imecauthorChen, Shih-Hung
dc.contributor.imecauthorHellings, Geert
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecHellings, Geert::0000-0002-5376-2119
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.date.accessioned2021-10-24T03:06:38Z
dc.date.available2021-10-24T03:06:38Z
dc.date.embargo9999-12-31
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27904
dc.source.beginpage3F-3.1
dc.source.conferenceInternational Reliability Physics Symposium - IRPS
dc.source.conferencedate2/04/2017
dc.source.conferencelocationMonterey, CA USA
dc.source.endpage3F-3.6
dc.title

ESD ballasting of Ge Finfet ggNMOS devices

dc.typeProceedings paper
dspace.entity.typePublication
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