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Determination of crystal misorientation in epitaxial lateral overgrowth of GaN

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dc.contributor.authorChen, W.M.
dc.contributor.authorMcNally, P.J.
dc.contributor.authorJacobs, Koen
dc.contributor.authorTuomi, T.
dc.contributor.authorDanilewsky, A.N.
dc.contributor.authorZytkiewicz, Z.R.
dc.contributor.authorLowney, D.
dc.contributor.authorKanatharana, J.
dc.contributor.authorKnuuttila, L.
dc.contributor.authorRiikonen, J.
dc.date.accessioned2021-10-14T21:14:00Z
dc.date.available2021-10-14T21:14:00Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6103
dc.source.beginpage94
dc.source.endpage102
dc.source.issue1
dc.source.journalJournal of Crystal Growth
dc.source.volume243
dc.title

Determination of crystal misorientation in epitaxial lateral overgrowth of GaN

dc.typeJournal article
dspace.entity.typePublication
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