Publication:

Assessment of Ge1-xSnx alloys for strained Ge CMOS devices

Date

2010-10
Proceedings Paper
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dc.contributor.authorTakeuchi, Shotaro
dc.contributor.authorShimura, Yosuke
dc.contributor.authorNishimura, Tsuyoshi
dc.contributor.authorVincent, Benjamin
dc.contributor.authorEneman, Geert
dc.contributor.authorClarysse, Trudo
dc.contributor.authorDemeulemeester, Jelle
dc.contributor.authorTemst, Kristiaan
dc.contributor.authorVantomme, Andre
dc.contributor.authorDekoster, Johan
dc.contributor.authorCaymax, Matty
dc.contributor.authorLoo, Roger
dc.contributor.authorNakatsuka, Osamu
dc.contributor.authorSakai, A.
dc.contributor.authorZaima, Shigeaki
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorTemst, Kristiaan
dc.contributor.imecauthorVantomme, Andre
dc.contributor.imecauthorDekoster, Johan
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-18T22:11:06Z
dc.date.available2021-10-18T22:11:06Z
dc.date.embargo9999-12-31
dc.date.issued2010-10
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18065
dc.source.beginpage529
dc.source.conferenceSiGe, Ge, and Related Compounds: Materials, Processing, and Devices
dc.source.conferencedate10/10/2010
dc.source.conferencelocationLas Vegas, NV USA
dc.source.endpage535
dc.title

Assessment of Ge1-xSnx alloys for strained Ge CMOS devices

dc.typeProceedings paper
dspace.entity.typePublication
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