Publication:

Self-formed Barrier using Cu-Mn Alloy Seed applied to a 400nm Pitch Wafer-to-Wafer Hybrid Bonding Technology

Date

2025
Proceedings Paper
https://doi.org/10.1109/ectc51687.2025.00064
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dc.contributor.authorVan Huylenbroeck, Stefaan
dc.contributor.authorChew, Soon Aik
dc.contributor.authorZhang, Boyao
dc.contributor.authorChery, Emmanuel
dc.contributor.authorDe Messemaeker, Joke
dc.contributor.authorGupta, Prafulla
dc.contributor.authorJourdan, Nicolas
dc.contributor.authorDewilde, Sven
dc.contributor.authorEl-Mekki, Zaid
dc.contributor.authorDe Vos, Joeri
dc.contributor.authorBeyer, Gerald
dc.contributor.authorBeyne, Eric
dc.date.accessioned2026-06-04T14:30:23Z
dc.date.available2026-06-04T14:30:23Z
dc.date.createdwos2025-11-01
dc.date.issued2025
dc.description.abstractWe demonstrate the use of a self-formed MnOx barrier system in a 400nm pitch wafer-to-wafer hybrid bonding technology. By careful tuning of certain critical steps, among them the hybrid pad copper polish, we achieve high electrical yield on large hybrid bonded daisy chain structures. Dielectric breakdown, copper diffusion, Cu bulge-out and electromigration mechanisms of the self-formed barrier concept are extensively analyzed.
dc.identifier.doi10.1109/ectc51687.2025.00064
dc.identifier.isbn979-8-3315-3933-7
dc.identifier.issn0569-5503
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/59583
dc.language.isoeng
dc.provenance.editstepusergreet.vanhoof@imec.be
dc.publisherIEEE COMPUTER SOC
dc.source.beginpage341
dc.source.conferenceIEEE 75th Electronic Components and Technology Conference (ECTC)
dc.source.conferencedate2025-05-27
dc.source.conferencelocationDallas
dc.source.endpage346
dc.source.journal2025 IEEE 75TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE, ECTC
dc.source.numberofpages6
dc.title

Self-formed Barrier using Cu-Mn Alloy Seed applied to a 400nm Pitch Wafer-to-Wafer Hybrid Bonding Technology

dc.typeProceedings paper
dspace.entity.typePublication
imec.internal.crawledAt2026-04-07
imec.internal.sourcecrawler
imec.internal.wosCreatedAt2026-04-07
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