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InGaAs tunnel FET with sub-nanometer EOT and sub-60 mV/dec sub-threshold swing at room temperature
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InGaAs tunnel FET with sub-nanometer EOT and sub-60 mV/dec sub-threshold swing at room temperature
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Date
2016
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Alian, AliReza
;
Mols, Yves
;
Bordallo, Caio C. M.
;
Verreck, Devin
;
Verhulst, Anne
;
Vandooren, Anne
;
Rooyackers, Rita
;
Agopian, P.G.D
;
Martino, J.A.
;
Thean, Aaron
;
Lin, Dennis
;
Mocuta, Dan
;
Collaert, Nadine
Journal
Applied Physics Letters
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1870
since deposited on 2021-10-23
Acq. date: 2025-12-14
Citations
Metrics
Views
1870
since deposited on 2021-10-23
Acq. date: 2025-12-14
Citations