Publication:

Evidences of anodic-oxidation reset mechanism in TiN\NiO\Ni RRAM cells

Date

2011
Proceedings Paper
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dc.contributor.authorGoux, Ludovic
dc.contributor.authorDegraeve, Robin
dc.contributor.authorGovoreanu, Bogdan
dc.contributor.authorChou, H.-Y.
dc.contributor.authorAfanasiev, Valeri
dc.contributor.authorMeersschaut, Johan
dc.contributor.authorToeller, Michael
dc.contributor.authorWang, X.P.
dc.contributor.authorKubicek, Stefan
dc.contributor.authorRichard, Olivier
dc.contributor.authorKittl, Jorge
dc.contributor.authorWouters, Dirk
dc.contributor.authorJurczak, Gosia
dc.contributor.authorAltimime, Laith
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorGovoreanu, Bogdan
dc.contributor.imecauthorAfanasiev, Valeri
dc.contributor.imecauthorMeersschaut, Johan
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.contributor.orcidimecMeersschaut, Johan::0000-0003-2467-1784
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.date.accessioned2021-10-19T13:53:08Z
dc.date.available2021-10-19T13:53:08Z
dc.date.embargo9999-12-31
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18989
dc.source.beginpage24
dc.source.conferenceSymposium on VLSI Technology
dc.source.conferencedate13/06/2011
dc.source.conferencelocationJapan Kyoto
dc.source.endpage25
dc.title

Evidences of anodic-oxidation reset mechanism in TiN\NiO\Ni RRAM cells

dc.typeProceedings paper
dspace.entity.typePublication
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