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Understanding the suppressed charge trapping in relaxed- and strained-Ge/SiO2/HfO2 pMOSFETs and implications for the screening of alternative high-mobility substrate/dielectric CMOS gate stacks

Date

2013
Proceedings Paper
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dc.contributor.authorFranco, Jacopo
dc.contributor.authorKaczer, Ben
dc.contributor.authorRoussel, Philippe
dc.contributor.authorMitard, Jerome
dc.contributor.authorSioncke, Sonja
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorMertens, Hans
dc.contributor.authorGrasser, Tibor
dc.contributor.authorGroeseneken, Guido
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorMertens, Hans
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.date.accessioned2021-10-21T07:41:11Z
dc.date.available2021-10-21T07:41:11Z
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22360
dc.source.beginpage397
dc.source.conferenceInternational Electron Devices Meeting - IEDM
dc.source.conferencedate9/12/2013
dc.source.conferencelocationWashington DC USA
dc.source.endpage400
dc.title

Understanding the suppressed charge trapping in relaxed- and strained-Ge/SiO2/HfO2 pMOSFETs and implications for the screening of alternative high-mobility substrate/dielectric CMOS gate stacks

dc.typeProceedings paper
dspace.entity.typePublication
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