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Calibration and application of Gaussian random field models for exposure and resist stochastic in EUV lithography

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dc.contributor.authorWei, Chih-, I
dc.contributor.authorLatypov, Azat
dc.contributor.authorDe Bisschop, Peter
dc.contributor.authorKhaira, Gurdaman
dc.contributor.authorFenger, Germain
dc.contributor.imecauthorDe Bisschop, Peter
dc.contributor.orcidimecDe Bisschop, Peter::0000-0002-8297-5076
dc.date.accessioned2023-01-05T12:44:20Z
dc.date.available2022-06-07T02:20:18Z
dc.date.available2023-01-05T12:44:20Z
dc.date.issued2022
dc.description.wosFundingTextThe authors would like to express their gratitude to Dr. Seiji Nagahara, Tokyo Electron Limited, the Japan Applied Physics Society and the Secretariat of the MNC 2021 conference for the invitation to present at the MNC 2021 conference leading to this publication. The authors would like to thank Qijian Wan, WenMing Wu and Ao Chen and for the programing support of experimental stochastic bands extraction. Thanks to Rajiv Sejpal from RIT, and Werner Gillijns, Sayantan Das from IMEC, and Seulki Kang, Yosuke Okamoto, Kotaro Maruyama from TASMIT for supporting the wafer data. This project has received funding from the ECSEL Joint Undertaking (JU) under grant agreement No 783247. The JU receives support from the European Union's Horizon 2020 research and innovation program and Netherlands, Belgium, Germany, France, Austria, United Kingdom, Israel, Switzerland.
dc.identifier.doi10.35848/1347-4065/ac54f5
dc.identifier.issn0021-4922
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/39925
dc.publisherIOP Publishing Ltd
dc.source.beginpageSD0806
dc.source.endpagena
dc.source.issueSD
dc.source.journalJAPANESE JOURNAL OF APPLIED PHYSICS
dc.source.numberofpages12
dc.source.volume61
dc.title

Calibration and application of Gaussian random field models for exposure and resist stochastic in EUV lithography

dc.typeJournal article review
dspace.entity.typePublication
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