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A study of relaxation current in high-k gate stacks
Publication:
A study of relaxation current in high-k gate stacks
Date
2004-03
Journal article
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Xu, Zhen
;
Pantisano, Luigi
;
Kerber, Andreas
;
Degraeve, Robin
;
Cartier, Eduard
;
De Gendt, Stefan
;
Heyns, Marc
;
Groeseneken, Guido
Journal
IEEE Trans. Electron Devices
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1932
since deposited on 2021-10-15
Acq. date: 2025-10-23
Citations
Metrics
Views
1932
since deposited on 2021-10-15
Acq. date: 2025-10-23
Citations