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Process options to enable (Sub-)1e-9 Ohm.cm2 contact resistivity on Si devices

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dc.contributor.authorYu, Hao
dc.contributor.authorSchaekers, Marc
dc.contributor.authorDemuynck, Steven
dc.contributor.authorRosseel, Erik
dc.contributor.authorEveraert, Jean-Luc
dc.contributor.authorChew, Soon Aik
dc.contributor.authorPeter, Antony
dc.contributor.authorKubicek, Stefan
dc.contributor.authorBarla, Kathy
dc.contributor.authorMocuta, Anda
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorCollaert, Nadine
dc.contributor.authorThean, Aaron
dc.contributor.authorDe Meyer, Kristin
dc.contributor.imecauthorYu, Hao
dc.contributor.imecauthorSchaekers, Marc
dc.contributor.imecauthorDemuynck, Steven
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorEveraert, Jean-Luc
dc.contributor.imecauthorPeter, Antony
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorBarla, Kathy
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorThean, Aaron
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecYu, Hao::0000-0002-1976-0259
dc.contributor.orcidimecSchaekers, Marc::0000-0002-1496-7816
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.accessioned2021-10-23T17:37:29Z
dc.date.available2021-10-23T17:37:29Z
dc.date.embargo9999-12-31
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27639
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7507683
dc.source.beginpage66
dc.source.conferenceIEEE International Interconnect Technology Conference / Advanced Metallization Conference - IITC/AMC)
dc.source.conferencedate23/05/2016
dc.source.conferencelocationSan Jose, CA USA
dc.source.endpage68
dc.title

Process options to enable (Sub-)1e-9 Ohm.cm2 contact resistivity on Si devices

dc.typeProceedings paper
dspace.entity.typePublication
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