DC characteristics of gate-all-around (GAA) silicon-on-insulator MOST's at cryogenic temperatures

dc.contributor.author	Simoen, Eddy
dc.contributor.author	Claeys, Cor
dc.contributor.imecauthor	Simoen, Eddy
dc.contributor.orcidimec	Simoen, Eddy::0000-0002-5218-4046
dc.date.accessioned	2021-09-29T12:47:23Z
dc.date.available	2021-09-29T12:47:23Z
dc.date.embargo	9999-12-31
dc.date.issued	1994
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/345
dc.source.beginpage	51
dc.source.endpage	56
dc.source.issue	C6
dc.source.journal	Journal de Physique IV (Colloque)
dc.source.volume	4
dc.title	DC characteristics of gate-all-around (GAA) silicon-on-insulator MOST's at cryogenic temperatures
dc.type	Journal article
dspace.entity.type	Publication
Files	Original bundle Name: 338.pdf Size: 414.03 KB Format: Adobe Portable Document Format Download
Publication available in collections:	Articles